Print Page
RQ6E085BNTCR
MOSFET, N-CH, 30V, 8.5A, 150DEG C, 1.25W ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 27 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.450 |
| 10+ | $1.200 |
| 25+ | $1.100 |
| 50+ | $1.010 |
| 100+ | $0.909 |
| 250+ | $0.859 |
| 500+ | $0.809 |
| 1000+ | $0.749 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.45
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerROHM
Manufacturer Part NoRQ6E085BNTCR
Newark Part No.29AK5164
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id8.5A
On Resistance Rds(on)0.0111ohm
Drain Source On State Resistance0.0144ohm
Transistor Case StyleSOT-457T
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd1.25W
Power Dissipation1.25W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0111ohm
Transistor Case Style
SOT-457T
Rds(on) Test Voltage
10V
Power Dissipation Pd
1.25W
No. of Pins
6Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
8.5A
Drain Source On State Resistance
0.0144ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability