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SEMIX703GB126HDS
IGBT Module, Half Bridge, 642 A, 2.1 V, 150 °C, SEMiX 3s
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Available to Order
Manufacturer Standard Lead Time: 27 week(s)
| Quantity | Price |
|---|---|
| 5+ | $447.060 |
| 10+ | $440.700 |
| 25+ | $415.350 |
Price for:Each
Minimum: 6
Multiple: 6
$2,682.36
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Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSEMIX703GB126HDS
Newark Part No.16M0127
Technical Datasheet
IGBT ConfigurationHalf Bridge
Transistor PolarityN Channel
DC Collector Current642A
Continuous Collector Current642A
Collector Emitter Saturation Voltage Vce(on)1.2kV
Collector Emitter Saturation Voltage2.1V
Power Dissipation Pd-
Power Dissipation-
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo1.2V
Junction Temperature, Tj Max150°C
Transistor Case StyleSEMiX 3s
IGBT TerminationStud
No. of Pins7Pins
Collector Emitter Voltage Max1.2V
IGBT TechnologyIGBT 3 [Trench]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
IGBT Configuration
Half Bridge
DC Collector Current
642A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation Pd
-
Operating Temperature Max
150°C
Junction Temperature, Tj Max
150°C
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2V
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Transistor Polarity
N Channel
Continuous Collector Current
642A
Collector Emitter Saturation Voltage
2.1V
Power Dissipation
-
Collector Emitter Voltage V(br)ceo
1.2V
Transistor Case Style
SEMiX 3s
No. of Pins
7Pins
IGBT Technology
IGBT 3 [Trench]
Product Range
-
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate