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SKIM609GAL12E4
IGBT Module, 748 A, 1.2 kV, 175 °C
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 25 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1,699.560 |
Price for:Each
Minimum: 4
Multiple: 4
$6,798.24
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Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKIM609GAL12E4
Newark Part No.77R2507
Technical Datasheet
Transistor PolarityN Channel
IGBT Configuration-
DC Collector Current748A
Continuous Collector Current748A
Collector Emitter Saturation Voltage Vce(on)1.2kV
Collector Emitter Saturation Voltage1.2kV
Power Dissipation-
Power Dissipation Pd-
Collector Emitter Voltage V(br)ceo800mV
Junction Temperature, Tj Max175°C
Operating Temperature Max175°C
Transistor Case Style-
IGBT TerminationPress Fit
No. of Pins32Pins
IGBT Technology-
Collector Emitter Voltage Max800mV
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
Transistor Polarity
N Channel
DC Collector Current
748A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
-
Collector Emitter Voltage V(br)ceo
800mV
Operating Temperature Max
175°C
IGBT Termination
Press Fit
IGBT Technology
-
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
IGBT Configuration
-
Continuous Collector Current
748A
Collector Emitter Saturation Voltage
1.2kV
Power Dissipation Pd
-
Junction Temperature, Tj Max
175°C
Transistor Case Style
-
No. of Pins
32Pins
Collector Emitter Voltage Max
800mV
Product Range
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate