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SKM 195 GAL 063DN
IGBT Module, 250 A, 2.5 V, 960 W, 150 °C, SEMITRANS 2
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Available to Order
Manufacturer Standard Lead Time: 25 week(s)
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM 195 GAL 063DN
Newark Part No.88K1190
Technical Datasheet
Transistor PolarityN Channel
IGBT Configuration-
Continuous Collector Current250A
DC Collector Current250A
Collector Emitter Saturation Voltage Vce(on)600V
Collector Emitter Saturation Voltage2.5V
Power Dissipation960W
Power Dissipation Pd960W
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleSEMITRANS 2
No. of Pins5Pins
IGBT TerminationStud
Collector Emitter Voltage Max600V
IGBT TechnologyNPT IGBT [Ultrafast]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
Transistor Polarity
N Channel
Continuous Collector Current
250A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
960W
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
600V
No. of Pins
5Pins
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
IGBT Configuration
-
DC Collector Current
250A
Collector Emitter Saturation Voltage
2.5V
Power Dissipation Pd
960W
Junction Temperature, Tj Max
150°C
Transistor Case Style
SEMITRANS 2
IGBT Termination
Stud
IGBT Technology
NPT IGBT [Ultrafast]
Product Range
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate