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MD300HFC170C2S
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 484 A, 1.7 kV, 0.00333 ohm, Module
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
| Quantity | Price |
|---|---|
| 1+ | $2,160.680 |
| 5+ | $2,139.450 |
| 10+ | $2,118.850 |
| 36+ | $2,035.560 |
Price for:Each
Minimum: 1
Multiple: 1
$2,160.68
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Product Information
ManufacturerSTARPOWER
Manufacturer Part NoMD300HFC170C2S
Newark Part No.84AH6497
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Transistor PolarityDual N Channel
Channel TypeDual N Channel
Continuous Drain Current Id484A
Drain Source Voltage Vds1.7kV
On Resistance Rds(on)0.00333ohm
Drain Source On State Resistance0.00333ohm
Transistor Case StyleModule
Power Dissipation Pd-
No. of Pins11Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max2.5V
Power Dissipation-
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Half Bridge
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.7kV
Drain Source On State Resistance
0.00333ohm
Power Dissipation Pd
-
Rds(on) Test Voltage
15V
Power Dissipation
-
Product Range
-
Transistor Polarity
Dual N Channel
Continuous Drain Current Id
484A
On Resistance Rds(on)
0.00333ohm
Transistor Case Style
Module
No. of Pins
11Pins
Gate Source Threshold Voltage Max
2.5V
Operating Temperature Max
150°C
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate