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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB6NK90ZT4Copy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Full Reel26AM4861
Re-Reel33R1128
Cut Tape33R1128
Your Part Number
4,542 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $5.690 | $5.69 |
| Total Price | $5.69 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $5.690 |
| 10+ | $3.990 |
| 25+ | $3.660 |
| 50+ | $3.330 |
| 100+ | $2.990 |
| 250+ | $2.880 |
Full Reel
| Quantity | Price |
|---|---|
| 1000+ | $2.470 |
| 2000+ | $2.440 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB6NK90ZT4Copy
Manufacturer Standard Lead Time15 weeks
Newark Part No.
Full Reel26AM4861
Re-Reel33R1128
Cut Tape33R1128
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds900V
Continuous Drain Current Id5.8A
Drain Source On State Resistance2ohm
On Resistance Rds(on)1.56ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd140W
Gate Source Threshold Voltage Max3.75V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Product Overview
The STB6NK90ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage MOSFETs.
- 100% Avalanche tested
- Extremely high dV/dt capability
- Very low intrinsic capacitance
- Very good manufacturing repeatability
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
900V
Drain Source On State Resistance
2ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
5.8A
On Resistance Rds(on)
1.56ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
140W
Power Dissipation
140W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (3)
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
