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STD5NM50AG
Power MOSFET, N Channel, 500 V, 7.5 A, 0.8 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD5NM50AG
Newark Part No.47AK6932
Product RangeMDmesh Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.580 |
| 10+ | $1.580 |
| 25+ | $1.580 |
| 50+ | $1.450 |
| 100+ | $1.450 |
| 250+ | $1.450 |
| 500+ | $1.340 |
| 1000+ | $1.340 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.58
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD5NM50AG
Newark Part No.47AK6932
Product RangeMDmesh Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id7.5A
On Resistance Rds(on)0.7ohm
Drain Source On State Resistance0.8ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation100W
Power Dissipation Pd100W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
500V
On Resistance Rds(on)
0.7ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
100W
No. of Pins
3Pins
Product Range
MDmesh Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
7.5A
Drain Source On State Resistance
0.8ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
100W
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for STD5NM50AG
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate