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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW3N150
Newark Part No.33R1326
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds1.5kV
Continuous Drain Current Id1.3A
On Resistance Rds(on)6ohm
Drain Source On State Resistance6ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd140W
Gate Source Threshold Voltage Max4V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
STW3N150 is a N-channel, 1500V, 2.5A, 6ohm typ, PowerMESH Power MOSFET in TO247 package. It is designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
- 140W total power dissipation
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Operating junction temperature of 150°C
- Suited for switching applications
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.5kV
On Resistance Rds(on)
6ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
1.3A
Drain Source On State Resistance
6ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
140W
Power Dissipation
140W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability