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QP50-6 TO (TO8S)
Photo Diode, 1100nm, 2nA, 10mA Peak DC Current, -40°C to 100°C, TO-8S-6
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTE CONNECTIVITY
Manufacturer Part NoQP50-6 TO (TO8S)
Newark Part No.16AM7581
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 50 week(s)
Product Information
ManufacturerTE CONNECTIVITY
Manufacturer Part NoQP50-6 TO (TO8S)
Newark Part No.16AM7581
Technical Datasheet
No. of Pins6Pins
Diode Case StyleTO-8S
Wavelength of Peak Sensitivity1100nm
Angle of Half Sensitivity ±-
Dark Current2nA
Operating Temperature Min-40°C
Operating Temperature Max100°C
Product Range-
Automotive Qualification Standard-
SVHCTo Be Advised
Technical Specifications
No. of Pins
6Pins
Wavelength of Peak Sensitivity
1100nm
Dark Current
2nA
Operating Temperature Max
100°C
Automotive Qualification Standard
-
Diode Case Style
TO-8S
Angle of Half Sensitivity ±
-
Operating Temperature Min
-40°C
Product Range
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate