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IRF620SPBF
Power MOSFET, N Channel, 200 V, 5.2 A, 0.8 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 9 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $1.670 |
| 2500+ | $1.640 |
Price for:Each
Minimum: 1000
Multiple: 1000
$1,670.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF620SPBF
Newark Part No.63J7331
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id5.2A
On Resistance Rds(on)0.8ohm
Drain Source On State Resistance0.8ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd50W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation50W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.8ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
50W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
5.2A
Drain Source On State Resistance
0.8ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
50W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate