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IRF640STRRPBF
Power MOSFET, N Channel, 200 V, 18 A, 0.18 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
| Quantity | Price |
|---|---|
| 500+ | $2.650 |
Price for:Each (Supplied on Cut Tape)
Minimum: 800
Multiple: 800
$2,120.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF640STRRPBF
Newark Part No.05W6870
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id18A
Drain Source On State Resistance0.18ohm
On Resistance Rds(on)0.18ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd3.1W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation3.1W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.18ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
3.1W
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
18A
On Resistance Rds(on)
0.18ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
3.1W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (3)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate