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                    • New Deals
                      1. Home
                      2. Semiconductors - Discretes
                      3. FETs
                      4. Dual MOSFETs
                      Print Page

                      SI1926DL-T1-E3

                      MOSFET, DUAL N-CH, 60V, 0.34A, SOT-363

                      VISHAY SI1926DL-T1-E3
                      Image is for illustrative purposes only. Please refer to product description.
                      ManufacturerVISHAY
                      Manufacturer Part NoSI1926DL-T1-E3
                      Newark Part No.01AC4977
                      Product RangeTrenchFET Series
                      Technical Datasheet

                      Data Sheet

                      See all Technical Docs
                      4 In Stock

                      Need more?

                      Same day shipping
                      Order before 9pm EST standard shipping
                      Available in quantity shown. To order more than shown inventory, contact sales
                      QuantityPrice
                      1+$0.832
                      10+$0.577
                      25+$0.527
                      50+$0.479
                      100+$0.429
                      250+$0.397
                      Price for:Each (Supplied on Cut Tape)
                      Minimum: 1
                      Multiple: 1
                      $0.83
                      Enter Your Part No/Line Note
                      Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
                      This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.

                      Product Information

                      ManufacturerVISHAY
                      Manufacturer Part NoSI1926DL-T1-E3
                      Newark Part No.01AC4977
                      Product RangeTrenchFET Series
                      Technical Datasheet

                      Data Sheet

                      Channel TypeN Channel
                      Continuous Drain Current Id370mA
                      Drain Source Voltage Vds N Channel60V
                      Drain Source Voltage Vds60V
                      Drain Source Voltage Vds P Channel60V
                      Continuous Drain Current Id N Channel370mA
                      Continuous Drain Current Id P Channel370mA
                      Drain Source On State Resistance N Channel1.4ohm
                      Drain Source On State Resistance P Channel1.4ohm
                      Transistor Case StyleSOT-363
                      No. of Pins6Pins
                      Power Dissipation N Channel510mW
                      Power Dissipation P Channel510mW
                      Operating Temperature Max150°C
                      Product RangeTrenchFET Series
                      Qualification-
                      MSLMSL 1 - Unlimited
                      SVHCNo SVHC (07-Nov-2024)

                      Alternatives for SI1926DL-T1-E3

                      1 Product Found

                      Technical Specifications

                      Channel Type

                      N Channel

                      Drain Source Voltage Vds N Channel

                      60V

                      Drain Source Voltage Vds P Channel

                      60V

                      Continuous Drain Current Id P Channel

                      370mA

                      Drain Source On State Resistance P Channel

                      1.4ohm

                      No. of Pins

                      6Pins

                      Power Dissipation P Channel

                      510mW

                      Product Range

                      TrenchFET Series

                      MSL

                      MSL 1 - Unlimited

                      Continuous Drain Current Id

                      370mA

                      Drain Source Voltage Vds

                      60V

                      Continuous Drain Current Id N Channel

                      370mA

                      Drain Source On State Resistance N Channel

                      1.4ohm

                      Transistor Case Style

                      SOT-363

                      Power Dissipation N Channel

                      510mW

                      Operating Temperature Max

                      150°C

                      Qualification

                      -

                      SVHC

                      No SVHC (07-Nov-2024)

                      Technical Docs (2)

                      Technical Data Sheet EN

                      Product Change Notice EN

                      Legislation and Environmental

                      US ECCN:EAR99
                      EU ECCN:Unknown
                      RoHS Compliant:Yes

                      RoHS

                      RoHS Phthalates Compliant:Yes

                      RoHS

                      SVHC:No SVHC (07-Nov-2024)
                      Download Product Compliance Certificate

                      Product Compliance Certificate

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