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SI2300DS-T1-GE3
Power MOSFET, N Channel, 30 V, 3.6 A, 0.068 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2300DS-T1-GE3
Newark Part No.69W7184
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.6A
Drain Source On State Resistance0.068ohm
On Resistance Rds(on)0.055ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.7W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Transistor Case StyleSOT-23
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI2300DS-T1-GE3 is an N-channel Power MOSFET, 100% Rg tested and suitable for load switch applications.
- Halogen-free in according to IEC 61249-2-21 standard
Applications
Power Management, Portable Devices
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.068ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
3.6A
On Resistance Rds(on)
0.055ohm
Power Dissipation Pd
1.7W
Gate Source Threshold Voltage Max
600mV
Power Dissipation
1.7W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability