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SI2301CDS-T1-E3.
Power MOSFET, P Channel, 20 V, 3.1 A, 0.11 ohm, SOT-23, Surface Mount
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6,000 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.192 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$576.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2301CDS-T1-E3.
Newark Part No.30AC0135
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.1A
On Resistance Rds(on)0.11ohm
Drain Source On State Resistance0.11ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.6W
Rds(on) Test Voltage2.5V
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max400mV
Power Dissipation1.6W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.11ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
2.5V
Gate Source Threshold Voltage Max
400mV
No. of Pins
3Pins
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
P Channel
Continuous Drain Current Id
3.1A
Drain Source On State Resistance
0.11ohm
Power Dissipation Pd
1.6W
Transistor Case Style
SOT-23
Power Dissipation
1.6W
Operating Temperature Max
150°C
Product Range
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate