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SI2301CDS-T1-E3
Power MOSFET, P Channel, 20 V, 3.1 A, 0.112 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 33 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.330 |
| 5000+ | $0.324 |
| 10000+ | $0.305 |
| 20000+ | $0.289 |
| 30000+ | $0.275 |
| 50000+ | $0.267 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$990.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2301CDS-T1-E3
Newark Part No.33P5163
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.1A
Drain Source On State Resistance0.112ohm
On Resistance Rds(on)0.11ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.6W
Rds(on) Test Voltage2.5V
Gate Source Threshold Voltage Max400mV
Transistor Case StyleSOT-23
Power Dissipation1.6W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Product Overview
Si2301CDS-T1-E3 is a P-channel 20V (D-S) MOSFET. The applications include a load switch.
- TrenchFET® Power MOSFET
- Drain-source breakdown voltage is -20V min (VGS = 0V, ID = - 250µA, TJ = 25°C)
- Gate-source threshold voltage range from -0.4 to 1V (VDS = VGS, ID = - 250µA, TJ = 25°C)
- Continuous drain current is - 3.1A (TJ = 150 °C, TC = 25°C)
- Pulsed drain current is -10A (TA = 25°C)
- Continuous source-drain diode current is -1.3A (TC = 25°C, TA = 25°C)
- Maximum power dissipation is 1.6W (TC = 25°C, TA = 25°C)
- VDS temperature coefficient is -18mV/°C typ (ID = - 250µA, TJ = 25°C)
- Forward transconductance is 9.5S typ (VDS = - 5V, ID = - 2.8A, TJ = 25°C)
- SOT-23 package, operating junction temperature range from -55 to 150°C
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.112ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
2.5V
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
SVHC
To Be Advised
Transistor Polarity
P Channel
Continuous Drain Current Id
3.1A
On Resistance Rds(on)
0.11ohm
Power Dissipation Pd
1.6W
Gate Source Threshold Voltage Max
400mV
Power Dissipation
1.6W
Operating Temperature Max
150°C
Product Range
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate