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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2301CDS-T1-E3
Newark Part No.69W7185
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.1A
On Resistance Rds(on)0.11ohm
Drain Source On State Resistance0.112ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage2.5V
Power Dissipation Pd1.6W
Gate Source Threshold Voltage Max400mV
Transistor Case StyleSOT-23
Power Dissipation1.6W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Product Overview
Si2301CDS-T1-E3 is a P-channel 20V (D-S) MOSFET. The applications include a load switch.
- TrenchFET® Power MOSFET
- Drain-source breakdown voltage is -20V min (VGS = 0V, ID = - 250µA, TJ = 25°C)
- Gate-source threshold voltage range from -0.4 to 1V (VDS = VGS, ID = - 250µA, TJ = 25°C)
- Continuous drain current is - 3.1A (TJ = 150 °C, TC = 25°C)
- Pulsed drain current is -10A (TA = 25°C)
- Continuous source-drain diode current is -1.3A (TC = 25°C, TA = 25°C)
- Maximum power dissipation is 1.6W (TC = 25°C, TA = 25°C)
- VDS temperature coefficient is -18mV/°C typ (ID = - 250µA, TJ = 25°C)
- Forward transconductance is 9.5S typ (VDS = - 5V, ID = - 2.8A, TJ = 25°C)
- SOT-23 package, operating junction temperature range from -55 to 150°C
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.11ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.6W
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
SVHC
To Be Advised
Channel Type
P Channel
Continuous Drain Current Id
3.1A
Drain Source On State Resistance
0.112ohm
Rds(on) Test Voltage
2.5V
Gate Source Threshold Voltage Max
400mV
Power Dissipation
1.6W
Operating Temperature Max
150°C
Product Range
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate