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Quantity | Price |
---|---|
1+ | $0.843 |
25+ | $0.574 |
50+ | $0.490 |
100+ | $0.404 |
250+ | $0.377 |
500+ | $0.351 |
1000+ | $0.319 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$4.22
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2312CDS-T1-GE3
Newark Part No.23T8496
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id6A
On Resistance Rds(on)0.0265ohm
Drain Source On State Resistance0.0318ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.25W
Gate Source Threshold Voltage Max450mV
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.0265ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
450mV
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
Drain Source On State Resistance
0.0318ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.25W
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for SI2312CDS-T1-GE3
3 Products Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability