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SI2319CDS-T1-BE3
Power MOSFET, P Channel, 40 V, 4.4 A, 0.077 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2319CDS-T1-BE3
Newark Part No.78AH6656
Product RangeTrenchFET Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 34 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.315 |
| 5000+ | $0.308 |
| 10000+ | $0.285 |
| 20000+ | $0.265 |
| 30000+ | $0.248 |
| 50000+ | $0.237 |
Price for:Each (Supplied on Full Reel)
Minimum: 1
Multiple: 1
$0.32
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2319CDS-T1-BE3
Newark Part No.78AH6656
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id4.4A
Drain Source On State Resistance0.077ohm
On Resistance Rds(on)0.064ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd2.5W
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCNo SVHC (07-Nov-2024)
Product Overview
Notes
BE3 suffix indicates non China production - not subject to US import tariffs
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.077ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation Pd
2.5W
No. of Pins
3Pins
Product Range
TrenchFET Series
SVHC
No SVHC (07-Nov-2024)
Channel Type
P Channel
Continuous Drain Current Id
4.4A
On Resistance Rds(on)
0.064ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
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Product Compliance Certificate