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SI2319DDS-T1-GE3
Power MOSFET, P Channel, 40 V, 3.6 A, 0.075 ohm, SOT-23, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2319DDS-T1-GE3
Newark Part No.78AC6536
Product RangeTrenchFET Gen III Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.889 |
| 10+ | $0.693 |
| 25+ | $0.643 |
| 50+ | $0.593 |
| 100+ | $0.543 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2319DDS-T1-GE3
Newark Part No.78AC6536
Product RangeTrenchFET Gen III Series
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id3.6A
On Resistance Rds(on)0.062ohm
Drain Source On State Resistance0.075ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.7W
Gate Source Threshold Voltage Max2.5V
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.062ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
TrenchFET Gen III Series
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
3.6A
Drain Source On State Resistance
0.075ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.7W
Power Dissipation
1.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
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