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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2333CDS-T1-E3
Newark Part No.88T7691
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id7.1A
Drain Source On State Resistance35mohm
On Resistance Rds(on)0.0285ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd2.5W
Gate Source Threshold Voltage Max400mV
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
12V
Drain Source On State Resistance
35mohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
400mV
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
7.1A
On Resistance Rds(on)
0.0285ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for SI2333CDS-T1-E3
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability