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SI2336DS-T1-BE3
Power MOSFET, N Channel, 30 V, 5.2 A, 42 mohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2336DS-T1-BE3
Newark Part No.78AH6658
Product RangeTrenchFET Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.278 |
| 5000+ | $0.272 |
| 10000+ | $0.251 |
| 20000+ | $0.234 |
| 30000+ | $0.218 |
| 50000+ | $0.209 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$834.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2336DS-T1-BE3
Newark Part No.78AH6658
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5.2A
On Resistance Rds(on)0.034ohm
Drain Source On State Resistance42mohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation1.8W
Power Dissipation Pd1.8W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCNo SVHC (07-Nov-2024)
Product Overview
Notes
BE3 suffix indicates non China production - not subject to US import tariffs
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.034ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.8W
No. of Pins
3Pins
Product Range
TrenchFET Series
SVHC
No SVHC (07-Nov-2024)
Channel Type
N Channel
Continuous Drain Current Id
5.2A
Drain Source On State Resistance
42mohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.8W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
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Product Compliance Certificate