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SI2337DS-T1-GE3
Power MOSFET, P Channel, 80 V, 2.2 A, 0.27 ohm, TO-236, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $2.370 |
| 10+ | $1.590 |
| 25+ | $1.440 |
| 50+ | $1.280 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$2.37
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2337DS-T1-GE3
Newark Part No.61AC1930
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id2.2A
Drain Source On State Resistance0.27ohm
On Resistance Rds(on)0.216ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd2.5mW
Power Dissipation2.5mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
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Product Overview
- 80V, 2.2A P-channel MOSFET in 3 pin TO-236 package
- TrenchFET® power MOSFET
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.27ohm
Transistor Case Style
TO-236
Rds(on) Test Voltage
10V
Power Dissipation Pd
2.5mW
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
2.2A
On Resistance Rds(on)
0.216ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation
2.5mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate