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SI2342DS-T1-GE3
MOSFET, N-CH, 8V, 6A, SOT-23
3,003 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $1.550 | $7.75 |
| Total Price | $7.75 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $1.550 |
| 25+ | $0.998 |
| 50+ | $0.843 |
| 100+ | $0.686 |
| 250+ | $0.619 |
| 500+ | $0.551 |
| 1000+ | $0.508 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2342DS-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.
Re-Reel01AC4980
Cut Tape01AC4980
Product RangeTrenchFET
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id6A
Drain Source On State Resistance0.017ohm
On Resistance Rds(on)0.014ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max800mV
Power Dissipation2.5W
Power Dissipation Pd2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
8V
Drain Source On State Resistance
0.017ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
2.5W
No. of Pins
3Pins
Product Range
TrenchFET
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
On Resistance Rds(on)
0.014ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
800mV
Power Dissipation Pd
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate