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SI2356DS-T1-GE3
Power MOSFET, N Channel, 40 V, 4.3 A, 0.051 ohm, SOT-23, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2356DS-T1-GE3Copy
Manufacturer Standard Lead Time37 weeks
Newark Part No.
Re-Reel05AC7747
Cut Tape05AC7747
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2356DS-T1-GE3Copy
Manufacturer Standard Lead Time37 weeks
Newark Part No.
Re-Reel05AC7747
Cut Tape05AC7747
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id4.3A
On Resistance Rds(on)0.042ohm
Drain Source On State Resistance0.051ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.7W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Transistor Case StyleSOT-23
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Product Overview
The SI2356DS-T1-GE3 from Vishay is a 40V SMD Power MOSFET, N Channel transistor in a SOT 23 case. Suitable for DC / DC converter, load switches, LED backlighting and power management applications.
- TrenchFET® Power MOSFET
- 100% Rg Tested
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.042ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
4.3A
Drain Source On State Resistance
0.051ohm
Power Dissipation Pd
1.7W
Gate Source Threshold Voltage Max
1.5V
Power Dissipation
1.7W
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate