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SI2365EDS-T1-GE3
Power MOSFET, P Channel, 20 V, 5.9 A, 0.032 ohm, SOT-23, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.074 |
| 10+ | $0.074 |
| 25+ | $0.074 |
| 50+ | $0.074 |
| 100+ | $0.074 |
| 250+ | $0.074 |
| 500+ | $0.074 |
| 1000+ | $0.074 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2365EDS-T1-GE3
Newark Part No.70AC6497
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id5.9A
Drain Source On State Resistance0.032ohm
On Resistance Rds(on)0.0265ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd1.7W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation1.7W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
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Product Overview
- Suitable for power management applications for portable and consumer i.e load switches and DC/DC converters
- TrenchFET® Power MOSFET
- 100% Rg Tested
- Built-in ESD Protection - Typical ESD Performance 3000V
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.032ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
1.7W
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
P Channel
Continuous Drain Current Id
5.9A
On Resistance Rds(on)
0.0265ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
1.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability