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SI2367DS-T1-GE3
Power MOSFET, P Channel, 20 V, 3.8 A, 66 mohm, TO-236, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 34 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.331 |
| 5000+ | $0.317 |
| 10000+ | $0.284 |
| 20000+ | $0.259 |
| 30000+ | $0.244 |
| 50000+ | $0.226 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$993.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2367DS-T1-GE3
Newark Part No.35R0031
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.8A
Drain Source On State Resistance66mohm
On Resistance Rds(on)0.066ohm
Transistor MountingSurface Mount
Power Dissipation Pd960mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Transistor Case StyleTO-236
Power Dissipation960mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
66mohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
TO-236
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
3.8A
On Resistance Rds(on)
0.066ohm
Power Dissipation Pd
960mW
Gate Source Threshold Voltage Max
400mV
Power Dissipation
960mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate