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SI2377EDS-T1-GE3
Power MOSFET, P Channel, 20 V, 4.4 A, 0.061 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.861 |
| 10+ | $0.625 |
| 25+ | $0.570 |
| 50+ | $0.515 |
| 100+ | $0.460 |
| 250+ | $0.416 |
| 500+ | $0.372 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$4.30
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2377EDS-T1-GE3
Newark Part No.23T8501
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.4A
Drain Source On State Resistance0.061ohm
On Resistance Rds(on)0.05ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation1.25W
Power Dissipation Pd1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
- P-channel 20V (D-S) TrenchFET® power MOSFET
- 100% Rg tested
- Typical ESD performance 2000V
- Built in ESD protection with zener diode
- Used in load switch for portable applications
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.061ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
1.25W
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
4.4A
On Resistance Rds(on)
0.05ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
Power Dissipation Pd
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate