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Available to Order
Manufacturer Standard Lead Time: 20 week(s)
Quantity | Price |
---|---|
1+ | $0.287 |
5000+ | $0.271 |
10000+ | $0.237 |
20000+ | $0.211 |
30000+ | $0.194 |
50000+ | $0.176 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$861.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2377EDS-T1-GE3
Newark Part No.86R3873
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.4A
Drain Source On State Resistance0.061ohm
On Resistance Rds(on)0.05ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd1.8W
Gate Source Threshold Voltage Max400mV
Transistor Case StyleSOT-23
Power Dissipation1.8W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.061ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.8W
Transistor Case Style
SOT-23
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
4.4A
On Resistance Rds(on)
0.05ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
400mV
Power Dissipation
1.8W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for SI2377EDS-T1-GE3
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate