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SI3421DV-T1-GE3
Power MOSFET, P Channel, 30 V, 8 A, 0.0192 ohm, TSOP, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI3421DV-T1-GE3
Newark Part No.29X6570
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
| Quantity | Price |
|---|---|
| 5000+ | $0.277 |
| 10000+ | $0.257 |
| 20000+ | $0.238 |
| 30000+ | $0.222 |
| 50000+ | $0.212 |
Price for:Each (Supplied on Full Reel)
Minimum: 6000
Multiple: 3000
$1,662.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3421DV-T1-GE3
Newark Part No.29X6570
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id8A
Drain Source On State Resistance0.0192ohm
On Resistance Rds(on)0.016ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd4.2W
Transistor Case StyleTSOP
Gate Source Threshold Voltage Max3V
Power Dissipation4.2W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0192ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
4.2W
Gate Source Threshold Voltage Max
3V
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
8A
On Resistance Rds(on)
0.016ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TSOP
Power Dissipation
4.2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate