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Available to Order
Manufacturer Standard Lead Time: 34 week(s)
Quantity | Price |
---|---|
1+ | $0.320 |
5000+ | $0.314 |
10000+ | $0.295 |
20000+ | $0.279 |
30000+ | $0.265 |
50000+ | $0.257 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$960.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3443CDV-T1-GE3
Newark Part No.15R4932
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.7A
Drain Source On State Resistance0.06ohm
On Resistance Rds(on)0.06ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd3.2W
Transistor Case StyleTSOP
Gate Source Threshold Voltage Max600mV
Power Dissipation3.2W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI3443CDV-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for HDD, asynchronous rectification and load switch applications.
- PWM optimized
- 100% Rg tested
- Halogen-free
- -55 to 150°C Operating temperature range
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.06ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.2W
Gate Source Threshold Voltage Max
600mV
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
4.7A
On Resistance Rds(on)
0.06ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
TSOP
Power Dissipation
3.2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate