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SI4153DY-T1-GE3
MOSFET, P-CH, 30V, 19.3A, SOIC ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSI4153DY-T1-GE3
Newark Part No.26AK3559
Product RangeTrenchFET Gen III Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.380 |
| 10+ | $1.050 |
| 25+ | $0.955 |
| 50+ | $0.864 |
| 100+ | $0.772 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$6.90
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4153DY-T1-GE3
Newark Part No.26AK3559
Product RangeTrenchFET Gen III Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id19.3A
On Resistance Rds(on)0.0072ohm
Drain Source On State Resistance0.0095ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd5.6W
Power Dissipation5.6W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0072ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation Pd
5.6W
No. of Pins
8Pins
Product Range
TrenchFET Gen III Series
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
19.3A
Drain Source On State Resistance
0.0095ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
5.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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