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SI4166DY-T1-GE3
MOSFET, N CH, 30V, 30.5A, SOIC
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4166DY-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.97W2647
Your Part Number
2,881 In Stock
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Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $3.230 |
| 10+ | $2.160 |
| 25+ | $1.950 |
| 50+ | $1.740 |
| 100+ | $1.530 |
| 500+ | $1.270 |
| 1000+ | $1.190 |
| 2500+ | $1.100 |
Price for:Each
Minimum: 1
Multiple: 1
$3.23
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4166DY-T1-GE3Copy
Manufacturer Standard Lead Time39 weeks
Newark Part No.97W2647
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id30.5A
Drain Source On State Resistance3900µohm
On Resistance Rds(on)0.0032ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd6.5W
Gate Source Threshold Voltage Max1.2V
Power Dissipation6.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
3900µohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
30.5A
On Resistance Rds(on)
0.0032ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
6.5W
Power Dissipation
6.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate