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SI4435FDY-T1-GE3
MOSFET, P-CH, 30V, 12.6A, 150DEG C, 4.8W
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4435FDY-T1-GE3Copy
Manufacturer Standard Lead Time23 weeks
Newark Part No.
Full Reel86AK6293
Re-Reel75AH9203RL
Cut Tape75AH9203
Product RangeTrenchFET III
Your Part Number
39,370 In Stock
50,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $1.160 | $5.80 |
| Total Price | $5.80 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $1.160 |
| 10+ | $0.751 |
| 15+ | $0.691 |
| 25+ | $0.631 |
| 50+ | $0.571 |
| 125+ | $0.512 |
| 250+ | $0.502 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.321 |
| 5000+ | $0.315 |
| 7500+ | $0.297 |
| 12500+ | $0.281 |
| 25000+ | $0.267 |
| 62500+ | $0.258 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4435FDY-T1-GE3Copy
Manufacturer Standard Lead Time23 weeks
Newark Part No.
Full Reel86AK6293
Re-Reel75AH9203RL
Cut Tape75AH9203
Product RangeTrenchFET III
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id12.6A
On Resistance Rds(on)0.015ohm
Drain Source On State Resistance0.019ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation4.8W
Power Dissipation Pd4.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET III
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.015ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
4.8W
No. of Pins
8Pins
Product Range
TrenchFET III
SVHC
No SVHC (04-Feb-2026)
Transistor Polarity
P Channel
Continuous Drain Current Id
12.6A
Drain Source On State Resistance
0.019ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
Power Dissipation Pd
4.8W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate