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SI4459BDY-T1-GE3
MOSFET, P-CH, -30V, -27.8A, SOIC
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ManufacturerVISHAY
Manufacturer Part NoSI4459BDY-T1-GE3
Newark Part No.56AC6588
Product RangeTrenchFET Gen IV
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $2.390 |
| 10+ | $1.770 |
| 25+ | $1.640 |
| 50+ | $1.520 |
| 100+ | $1.410 |
| 250+ | $1.300 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$11.95
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4459BDY-T1-GE3
Newark Part No.56AC6588
Product RangeTrenchFET Gen IV
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id27.8A
On Resistance Rds(on)0.0041ohm
Drain Source On State Resistance0.0049ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd5.6W
Gate Source Threshold Voltage Max2.2V
Power Dissipation5.6W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0041ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
27.8A
Drain Source On State Resistance
0.0049ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
5.6W
Power Dissipation
5.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
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