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SI4465ADY-T1-GE3
Power MOSFET, P Channel, 8 V, 13.7 A, 0.009 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 500+ | $1.510 |
Price for:Each (Supplied on Cut Tape)
Minimum: 2500
Multiple: 2500
$3,775.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4465ADY-T1-GE3
Newark Part No.26R1880
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds8V
Continuous Drain Current Id13.7A
Drain Source On State Resistance0.009ohm
On Resistance Rds(on)0.016ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage1.8V
Power Dissipation Pd6.5W
Gate Source Threshold Voltage Max450mV
Power Dissipation6.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
8V
Drain Source On State Resistance
0.009ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
1.8V
Gate Source Threshold Voltage Max
450mV
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
13.7A
On Resistance Rds(on)
0.016ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
6.5W
Power Dissipation
6.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate