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SI4564DY-T1-GE3
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 10 A, 10 A, 0.0145 ohm
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | VISHAY |
|---|---|
| Manufacturer Part No | SI4564DY-T1-GE3Copy |
| Manufacturer Standard Lead Time | 37 weeks |
| Newark Part No. | Full Reel86R3889 Re-Reel05W6946RL Cut Tape05W6946 |
| Your Part Number | |
| Technical Datasheet |
Available to Order
Manufacturer Standard Lead Time: 37 week(s)
Notify me when back in stock
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $3.180 | $3.18 |
| Total Price | $3.18 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $3.180 |
| 50+ | $1.770 |
| 100+ | $1.580 |
| 250+ | $1.460 |
| 500+ | $1.330 |
| 1000+ | $1.300 |
| 2500+ | $1.130 |
| 5000+ | $1.100 |
Full Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.844 |
| 5000+ | $0.827 |
| 7500+ | $0.811 |
| 12500+ | $0.794 |
| 25000+ | $0.777 |
| 62500+ | $0.760 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | VISHAY |
|---|---|
| Manufacturer Part No | SI4564DY-T1-GE3Copy |
| Manufacturer Standard Lead Time | 37 weeks |
| Newark Part No. | Full Reel86R3889 Re-Reel05W6946RL Cut Tape05W6946 |
| Technical Datasheet | |
| Channel Type | Complementary N and P Channel |
| Drain Source Voltage Vds N Channel | 40V |
| Continuous Drain Current Id | 10A |
| Drain Source Voltage Vds P Channel | 40V |
| Drain Source Voltage Vds | 40V |
| Continuous Drain Current Id N Channel | 10A |
| Continuous Drain Current Id P Channel | 10A |
| Drain Source On State Resistance N Channel | 0.0145ohm |
| Drain Source On State Resistance P Channel | 0.0145ohm |
| Transistor Case Style | SOIC |
| No. of Pins | 8Pins |
| Power Dissipation N Channel | 3.1W |
| Power Dissipation P Channel | 3.1W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| SVHC | Lead (04-Feb-2026) |
Product Overview
The SI4564DY-T1-GE3 is a 40V Dual N and P-channel TrenchFET® Power MOSFET.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
Applications
Power Management
Technical Specifications
| Channel Type | Complementary N and P Channel |
|---|---|
| Continuous Drain Current Id | 10A |
| Drain Source Voltage Vds | 40V |
| Continuous Drain Current Id P Channel | 10A |
| Drain Source On State Resistance P Channel | 0.0145ohm |
| No. of Pins | 8Pins |
| Power Dissipation P Channel | 3.1W |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| Drain Source Voltage Vds N Channel | 40V |
|---|---|
| Drain Source Voltage Vds P Channel | 40V |
| Continuous Drain Current Id N Channel | 10A |
| Drain Source On State Resistance N Channel | 0.0145ohm |
| Transistor Case Style | SOIC |
| Power Dissipation N Channel | 3.1W |
| Operating Temperature Max | 150°C |
| Product Range | - |
| SVHC | Lead (04-Feb-2026) |
Technical Docs (3)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | Lead (04-Feb-2026) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Product traceability |