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SI4896DY-T1-E3
Power MOSFET, N Channel, 80 V, 9.5 A, 0.0165 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
| Quantity | Price |
|---|---|
| 500+ | $1.910 |
Price for:Each (Supplied on Cut Tape)
Minimum: 2500
Multiple: 2500
$4,775.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4896DY-T1-E3
Newark Part No.06J7957
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id9.5A
On Resistance Rds(on)0.0165ohm
Drain Source On State Resistance0.0165ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd3.1W
Gate Source Threshold Voltage Max2V
Power Dissipation3.1W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4896DY-T1-E3 is a 80VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.0165ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
9.5A
Drain Source On State Resistance
0.0165ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.1W
Power Dissipation
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate