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Available to Order
Manufacturer Standard Lead Time: 16 week(s)
Quantity | Price |
---|---|
500+ | $1.270 |
Price for:Each (Supplied on Cut Tape)
Minimum: 2500
Multiple: 2500
$3,175.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4925BDY-T1-E3
Newark Part No.06J7973
Technical Datasheet
Channel TypeP Channel
Continuous Drain Current Id7.1A
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel7.1A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.02ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel1.1W
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The SI4925BDY-T1-E3 is a dual P-channel Power MOSFET for load switch applications.
- Halogen-free in according to IEC 61249-2-21 standard
Applications
Automation & Process Control, Computers & Computer Peripherals, Consumer Electronics, Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
7.1A
Drain Source On State Resistance P Channel
0.02ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.1W
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
7.1A
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SOIC
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Alternatives for SI4925BDY-T1-E3
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate