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Available to Order
Manufacturer Standard Lead Time: 11 week(s)
Quantity | Price |
---|---|
2000+ | $1.250 |
4000+ | $1.130 |
6000+ | $1.100 |
10000+ | $1.060 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$3,750.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI6423DQ-T1-GE3
Newark Part No.16P3801
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id9.5A
On Resistance Rds(on)0.0068ohm
Drain Source On State Resistance0.0085ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.05W
Rds(on) Test Voltage8V
Gate Source Threshold Voltage Max800mV
Transistor Case StyleTSSOP
Power Dissipation1.05W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
- P-channel 12V (D-S) TrenchFET® power MOSFET
- Used in load switch
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
12V
On Resistance Rds(on)
0.0068ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
8V
Transistor Case Style
TSSOP
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
9.5A
Drain Source On State Resistance
0.0085ohm
Power Dissipation Pd
1.05W
Gate Source Threshold Voltage Max
800mV
Power Dissipation
1.05W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate