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SI6423DQ-T1-GE3.
Power MOSFET, P Channel, 12 V, 9.5 A, 0.0068 ohm, TSSOP, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 10 week(s)
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| Quantity | Price |
|---|---|
| 2000+ | $1.210 |
| 4000+ | $1.100 |
| 6000+ | $1.060 |
| 10000+ | $1.030 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$3,630.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI6423DQ-T1-GE3.
Newark Part No.30AC0179
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id9.5A
Drain Source On State Resistance0.0068ohm
On Resistance Rds(on)0.0068ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.05W
Rds(on) Test Voltage8V
Transistor Case StyleTSSOP
Gate Source Threshold Voltage Max800mV
Power Dissipation1.05W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.0068ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
8V
Gate Source Threshold Voltage Max
800mV
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
9.5A
On Resistance Rds(on)
0.0068ohm
Power Dissipation Pd
1.05W
Transistor Case Style
TSSOP
Power Dissipation
1.05W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate