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SI7309DN-T1-GE3
MOSFET, P-CH, -60V, -8A, POWERPAK 1212-8
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3,124 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.100 |
| 10+ | $1.560 |
| 25+ | $1.460 |
| 50+ | $1.370 |
| 100+ | $1.270 |
| 250+ | $1.170 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$10.50
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7309DN-T1-GE3
Newark Part No.61AC1939
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id8A
On Resistance Rds(on)0.092ohm
Drain Source On State Resistance0.115ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd19.8W
Gate Source Threshold Voltage Max3V
Power Dissipation19.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.092ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
8A
Drain Source On State Resistance
0.115ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
19.8W
Power Dissipation
19.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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