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SI7386DP-T1-E3
Power MOSFET, N Channel, 30 V, 19 A, 0.007 ohm, PowerPAK SO, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI7386DP-T1-E3Copy
Manufacturer Standard Lead Time37 weeks
Newark Part No.
Full Reel22M8865
Cut Tape16P3841
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 37 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 3000 | $1.540 | $4,620.00 |
| Total Price | $4,620.00 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 3000+ | $1.540 |
| 6000+ | $1.510 |
| 9000+ | $1.480 |
| 15000+ | $1.440 |
| 30000+ | $1.410 |
| 75000+ | $1.390 |
| 150000+ | $1.360 |
| 300000+ | $1.320 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $1.120 |
| 9000+ | $1.100 |
| 15000+ | $1.070 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7386DP-T1-E3Copy
Manufacturer Standard Lead Time37 weeks
Newark Part No.
Full Reel22M8865
Cut Tape16P3841
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id19A
Drain Source On State Resistance0.007ohm
On Resistance Rds(on)0.0058ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Power Dissipation Pd1.8W
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max2.5V
Power Dissipation1.8W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead (04-Feb-2026)
Product Overview
The SI7386DP-T1-E3 is a TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC conversion applications.
- Reduced total dynamic gate charge (Qg)
- Fast switching
- PWM optimized for high efficiency
- New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- 100% Rg tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.007ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.8W
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
19A
On Resistance Rds(on)
0.0058ohm
Rds(on) Test Voltage
20V
Transistor Case Style
PowerPAK SO
Power Dissipation
1.8W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead (04-Feb-2026)
Technical Docs (2)
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Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate