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SI7658ADP-T1-GE3
Power MOSFET, N Channel, 30 V, 60 A, 0.0022 ohm, PowerPAK SO, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $2.210 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$6,630.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7658ADP-T1-GE3
Newark Part No.16P3856
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id60A
Drain Source On State Resistance0.0022ohm
On Resistance Rds(on)0.0018ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Power Dissipation Pd5.4W
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max2.5V
Power Dissipation5.4W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0022ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
5.4W
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
60A
On Resistance Rds(on)
0.0018ohm
Rds(on) Test Voltage
20V
Transistor Case Style
PowerPAK SO
Power Dissipation
5.4W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate