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SI9407BDY-T1-GE3.
Power MOSFET, P Channel, 60 V, 4.7 A, 0.1 ohm, SOIC, Surface Mount
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17,500 In Stock
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| Quantity | Price |
|---|---|
| 2000+ | $0.826 |
| 4000+ | $0.741 |
| 6000+ | $0.715 |
| 10000+ | $0.700 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$2,065.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI9407BDY-T1-GE3.
Newark Part No.26AC3352
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id4.7A
Drain Source On State Resistance0.1ohm
On Resistance Rds(on)0.1ohm
Transistor MountingSurface Mount
Power Dissipation Pd5W
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.1ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
4.7A
On Resistance Rds(on)
0.1ohm
Power Dissipation Pd
5W
Transistor Case Style
SOIC
Power Dissipation
5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate