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SIA469DJ-T1-GE3
Power MOSFET, P Channel, 30 V, 12 A, 0.0265 ohm, PowerPAK SC-70, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $0.900 |
| 10+ | $0.587 |
| 25+ | $0.526 |
| 50+ | $0.466 |
| 100+ | $0.405 |
| 250+ | $0.365 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA469DJ-T1-GE3
Newark Part No.10AC9109
Product RangeTrenchFET
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id12A
On Resistance Rds(on)0.021ohm
Drain Source On State Resistance0.0265ohm
Transistor Case StylePowerPAK SC-70
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd15.6W
Power Dissipation15.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
P-channel 30V (D-S) MOSFET suitable for use in load switch, DC/DC converters, high speed switching, power management in battery-operated, mobile and wearable devices.
- TrenchFET® Gen III p-channel power MOSFET
- Thermally enhanced PowerPAK® SC-70 package
- 100% Rg tested
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.021ohm
Transistor Case Style
PowerPAK SC-70
Rds(on) Test Voltage
10V
Power Dissipation Pd
15.6W
No. of Pins
6Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
12A
Drain Source On State Resistance
0.0265ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation
15.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate