Print Page
SIB452DK-T1-GE3
Power MOSFET, N Channel, 190 V, 1.5 A, 2.4 ohm, PowerPAK SC75, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIB452DK-T1-GE3Copy
Newark Part No.
Re-Reel16P3642
Cut Tape16P3642
Your Part Number
3,000 In Stock
Need more?
FREE Standard Delivery
on orders over $200
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.160 | $2.16 |
| Total Price | $2.16 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $2.160 |
| 25+ | $1.510 |
| 50+ | $1.270 |
| 100+ | $1.050 |
| 250+ | $0.943 |
| 500+ | $0.844 |
| 1000+ | $0.782 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIB452DK-T1-GE3Copy
Newark Part No.
Re-Reel16P3642
Cut Tape16P3642
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds190V
Continuous Drain Current Id1.5A
On Resistance Rds(on)1.8ohm
Drain Source On State Resistance2.4ohm
Transistor MountingSurface Mount
Power Dissipation Pd13W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.5V
Transistor Case StylePowerPAK SC75
Power Dissipation13W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SIB452DK-T1-GE3 is a 190VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for boost converter applications.
- New thermally enhanced PowerPAK® package
- Small footprint area
- Low ON-resistance
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
190V
On Resistance Rds(on)
1.8ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
PowerPAK SC75
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
1.5A
Drain Source On State Resistance
2.4ohm
Power Dissipation Pd
13W
Gate Source Threshold Voltage Max
1.5V
Power Dissipation
13W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate