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SIDR680ADP-T1-RE3
MOSFET, N CH, 80V, 137A, POWERPAK SO-DC ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSIDR680ADP-T1-RE3
Newark Part No.74AH4893
Product RangeTrenchFET Gen IV
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 30 week(s)
| Quantity | Price |
|---|---|
| 1+ | $3.760 |
| 25+ | $3.200 |
| 100+ | $2.580 |
| 500+ | $2.380 |
| 1000+ | $1.550 |
| 2500+ | $1.530 |
| 5000+ | $1.520 |
| 10000+ | $1.490 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$18.80
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIDR680ADP-T1-RE3
Newark Part No.74AH4893
Product RangeTrenchFET Gen IV
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id137A
On Resistance Rds(on)0.00235ohm
Drain Source On State Resistance0.00235ohm
Transistor Case StylePowerPAK SO-DC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation Pd125W
Power Dissipation125W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.00235ohm
Transistor Case Style
PowerPAK SO-DC
Rds(on) Test Voltage
10V
Power Dissipation Pd
125W
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
137A
Drain Source On State Resistance
0.00235ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability