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ManufacturerVISHAY
Manufacturer Part NoSIR164ADP-T1-GE3
Newark Part No.81AC2788
Product RangeTrenchFET Gen IV
Technical Datasheet
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Quantity | Price |
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1+ | $2.140 |
10+ | $1.590 |
25+ | $1.480 |
50+ | $1.380 |
100+ | $1.280 |
250+ | $1.190 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR164ADP-T1-GE3
Newark Part No.81AC2788
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id40A
On Resistance Rds(on)0.0018ohm
Drain Source On State Resistance0.0022ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.1V
Power Dissipation62.5W
Power Dissipation Pd62.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0018ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
62.5W
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
Drain Source On State Resistance
0.0022ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.1V
Power Dissipation Pd
62.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Alternatives for SIR164ADP-T1-GE3
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability