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SIRA14DP-T1-GE3
MOSFET, N-CH, 30V, PPAK-SO8
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2,322 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.340 |
| 10+ | $1.010 |
| 25+ | $0.916 |
| 50+ | $0.829 |
| 100+ | $0.740 |
| 500+ | $0.636 |
| 1000+ | $0.591 |
Price for:Each
Minimum: 1
Multiple: 1
$1.34
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIRA14DP-T1-GE3
Newark Part No.63W4125
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id20A
Drain Source On State Resistance0.0051ohm
On Resistance Rds(on)0.00425ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd31.2W
Gate Source Threshold Voltage Max1.1V
Power Dissipation31.2W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0051ohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
20A
On Resistance Rds(on)
0.00425ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
31.2W
Power Dissipation
31.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability