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SIS108DN-T1-GE3
MOSFET, N-CH, 80V, 16A, 150DEG C, 24W
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIS108DN-T1-GE3
Newark Part No.06AH4244
Product RangeTrenchFET Gen IV
Technical Datasheet
15,211 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.820 |
| 10+ | $1.320 |
| 25+ | $1.240 |
| 50+ | $1.160 |
| 100+ | $1.080 |
| 250+ | $1.010 |
| 500+ | $0.934 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$1.82
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIS108DN-T1-GE3
Newark Part No.06AH4244
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id16A
Drain Source On State Resistance0.028ohm
On Resistance Rds(on)0.028ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation24W
Power Dissipation Pd24W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.028ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
24W
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
16A
On Resistance Rds(on)
0.028ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
24W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability